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FDP15N65 / FDPF15N65 650V N-Channel MOSFET
UniFET
FDP15N65 / FDPF15N65
650V N-Channel MOSFET Features
* 15A, 650V, RDS(on) = 0.44 @VGS = 10 V * Low gate charge ( typical 48.5 nC) * Low Crss ( typical 23.6 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
October 2006
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDP15N65
15 9.5 60
FDPF15N65
650 15* 9.5* 60*
Unit
V A A A V mJ A mJ V/ns
30 637 15 25.0 4.5 250 2.0 -55 to +150 300 73.5 0.59
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
FDP15N65
0.5 0.5 62.5
FDPF15N65
1.7 -62.5
Unit
C/W C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
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FDP15N65 / FDPF15N65 Rev. A
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP15N65 FDPF15N65
Device
FDP15N65 FDPF15N65
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
---
Tape Width
---
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 650V, VGS = 0V VDS = 520V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 7.5A VDS = 40V, ID = 7.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
650 -----3.0 ------
Typ
-0.65 -----0.36 19.2 2380 295 23.6 65 125 105 65 48.5 14.0 21.2
Max Units
--1 10 100 -100 5.0 0.44 -3095 385 35.5 140 260 220 140 63.0 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 325V, ID = 15A RG = 21.7
(Note 4, 5)
------(Note 4, 5)
VDS = 520V, ID = 15A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 15A VGS = 0V, IS = 15A dIF/dt =100A/s
(Note 4)
------
---496 5.69
15 60 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.23mH, IAS = 15A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 15A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP15N65 / FDPF15N65 Rev. A
2
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FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V
ID, Drain Current [A]
ID, Drain Current [A]
10
1
10
1
150 C 25 C -55 C
* Notes : 1. VDS = 40V 2. 250s Pulse Test
o o
o
10
0
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
10
-1
10
0
10
-1
10
0
10
1
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
1.0
RDS(ON) [], Drain-Source On-Resistance
0.8
0.6
VGS = 10V
IDR, Reverse Drain Current [A]
10
1
0.4
150 C 25 C
o
o
VGS = 20V
0.2
* Note : TJ = 25 C
o
* Notes : 1. VGS = 0V 2. 250s Pulse Test
0.0
0
10
20
30
40
50
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
5000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
Figure 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
4000
Coss Ciss
Crss = Cgd
10
VDS = 130V VDS = 325V VDS = 520V
Capacitances [pF]
8
3000
6
2000
* Note ; 1. VGS = 0 V 2. f = 1 MHz
4
1000
Crss
2
* Note : ID = 15A
0 -1 10
10
0
10
1
0
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP15N65 / FDPF15N65 Rev. A
3
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FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0 3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) RDS(ON), On-Resistance Drain-Source (Normalized) Drain-Source On-Resistance
2.5 2.5
1.1
2.0 2.0
1.0
1.5 1.5
1.0 1.0
* Notes : * Notes : = 10 V 1. VGS 1. VIGS= 5.5 V 2. D = 10 A 2. ID = 7.5 A
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
0.5 0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 0.0 -100 -100
-50 -50
0 0
50 50
100 100
o
150 150
200 200
TJ, Junction Temperature [ C]
T, Junction Temperature o C] TJJ,Junction Temperature [[ C]
Figure 9-1. Safe Operating Area for FDP15N65
Figure 9-2. Safe Operating Area for FDPF15N65
10
2
10 s 100 s
10
2
10 s
ID, Drain Current [A]
10
1
ID, Drain Current [A]
1 ms 10 ms 100 ms DC
100 s
10
1
1 ms 10 ms 100 ms DC
10
0
Operation in This Area is Limited by R DS(on)
10
0
Operation in This Area is Limited by R DS(on)
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current vs. Case Temperature
18
15
ID, Drain Current [A]
12
9
6
3
0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
FDP15N65 / FDPF15N65 Rev. A
4
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FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP15N65
10
0
(t), Thermal Response
D = 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
* N o te s : 1 . Z J C ( t) = 0 .5
o
10
-1
PDM t1 t2
C /W M a x .
JC
10
-2
2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
Z
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FDPF15N65
10
0
D = 0 .5 0 .2 0 .1
(t), Thermal Response
10
-1
0 .0 5 0 .0 2 0 .0 1
PDM t1
* N o te s :
t2
o
JC
Z
10
-2
s in g le p u ls e
1 . Z J C ( t) = 1 .7
C /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]
FDP15N65 / FDPF15N65 Rev. A
5
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FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP15N65 / FDPF15N65 Rev. A
6
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FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP15N65 / FDPF15N65 Rev. A
7
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FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
FDP15N65 / FDPF15N65 Rev. A
8
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FDP15N65 / FDPF15N65 650V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FDP15N65 / FDPF15N65 Rev. A
9
15.87 0.20
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I21

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